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| Advance Product Information August 4, 2004 12-19 GHz VSAT Amplifier Key Features * * * * * TGA2508-EPU 0.50 um pHEMT Technology 30 dB Nominal Gain 30 dBm P1dB @ 15 GHz Bias Conditions: 7 V, 433 mA Chip Dimensions: 2.1 x 1.1 x 0.1 mm Preliminary Measured Data Bias Conditions: Vd = 7 V, Id = 433 mA 35 30 Primary Applications * * * VSAT Ground Terminals Point to Point Radio Military Ku Band G a in (d B ) 25 20 15 10 10 11 12 13 14 15 16 17 Fre qu e nc y (GHz) 18 19 20 Pout @ 1dB & 2dB compression (dBm) 32 31 30 29 28 27 26 25 12 13 14 15 P2dB P1dB 16 17 18 19 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information August 4, 2004 TGA2508-EPU TABLE I MAXIMUM RATINGS 5/ SYMBOL V + - PARAMETER Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 8V -2 to 0 V 591 mA 16 mA 17 dBm 6.75 W 150 C 320 C -65 to 150 C 0 0 0 NOTES 4/ V I + 4/ | IG | PIN PD T CH TM TSTG 3/ 4/ 1/ 2/ 1/ 2/ These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. When operated at this bias condition with a base plate temperature of 70 C, the median life is reduced from 6.4E+7 to 1E+6 hrs. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. These ratings represent the maximum operable values for this device. 0 3/ 4/ 5/ Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information August 4, 2004 TGA2508-EPU TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25oC 5oC) PARAMETER Drain Operating Quiescent Current Small Signal Gain Input Return Loss (Linear Small Signal) Output Return Loss (Linear Small Signal Output Power @ 1 dB Compression Gain @ 15GHz TYPICAL 7 433 30 17 7 30 UNITS V mA dB dB dB dBm TABLE III THERMAL INFORMATION* PARAMETER RJC Thermal Resistance (channel to backside of carrier) TEST CONDITIONS Vd = 7 V ID = 433 mA Pdiss = 3.031 W TCH (OC) 105.92 RTJC (qC/W) 11.85 TM (HRS) 6.4E+7 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. * This information is a result of a thermal model. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information August 4, 2004 TGA2508-EPU Preliminary Measured Data Bias Conditions: Vd = 7 V, Id = 433 mA 36 34 32 30 28 Gain (dB) 26 24 22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 36 34 32 30 28 Gain (dB) 26 24 22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) -40 0C +25 0C +70 0C Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information August 4, 2004 TGA2508-EPU Preliminary Measured Data Bias Conditions: Vd = 7 V, Id = 433 mA 0 -5 Input Return Loss (dB) -10 -15 -20 -25 -30 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 0 -5 Output Return Loss (dB) -10 -15 -20 -25 -30 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Advance Product Information August 4, 2004 TGA2508-EPU Preliminary Measured Data Bias Conditions: Vd = 7 V, Id = 433 mA 32 Pout @ 1dB & 2dB compression (dBm) 31 30 29 28 27 26 25 12 13 14 15 16 17 18 19 Fre que ncy (GHz) P2dB P1dB Frequency @ 15 GHz 35 30 Pout (dBm) 25 -40 0C +25 0C +70 0C 20 15 10 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 Pin (dBm ) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Advance Product Information August 4, 2004 TGA2508-EPU Preliminary Measured Data Bias Conditions: Vd = 7 V, Id = 433 mA 35 PAE @ 1dB & 2dB Compression (%) 30 25 20 15 10 5 0 12 13 14 15 16 17 18 19 Fre que ncy (GHz) P2dB P1dB 32 30 28 Pout (dBm) 26 24 22 20 18 16 14 -20 -15 -10 -5 0 5 10 15 Pin (dBm) 14GHz 14.5GHz 15GHz Series4 760 720 680 640 600 560 520 480 440 400 Ids (mA) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Advance Product Information August 4, 2004 TGA2508-EPU Mechanical Drawing 0.118 (0.005) 1.784 (0.070) 1.984 (0.078) 1.138 (0.045) 1.020 (0.040) 6 5 0.970 (0.038 0.801 (0.032) 0.738 (0.029) 0.599 (0.024) 1 4 0.536 (0.021) 0.396 (0.016) 0.333 (0.013) 0.120 (0.005) 2 3 0.119 (0.005) 0.145 (0.006) 1.982 (0.078) 2.108 (0.083) Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) Bond pad #1: Bond pad #2: Bond pad #3: Bond pad #4: Bond pad #5: Bond pad #6: (RF In) (Vg) (DC GND)* (RF Out) (DC GND)* (Vd) 0.098 x 0.199 0.099 x 0.099 0.098 x 0.099 0.099 x 0.198 0.098 x 0.198 0.202 x 0.098 (0.004 x 0.008) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.008) (0.004 x 0.008) (0.008 x 0.004) * Note: RF GND is back side of MMIC. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8 Advance Product Information August 4, 2004 TGA2508-EPU Chip Assembly Diagram VD RF IN RF OUT VG GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 9 Advance Product Information August 4, 2004 TGA2508-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 10 |
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